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TPD1046F Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD1046F 2-IN-1 Low-Side Power Switch for Motor, Solenoid and Lamp Drive The TPD1046F is a 2-IN-1 low-side switch. The IC has a vertical MOSFET output which can be directly driven from a CMOS or TTL logic circuit (e.g., an MPU). The IC is equipped with intelligent self-protection functions. Features * Two built-in power IC chips with a structure combining a control block and a vertical power MOSFET (L2--MOS) on each chip. Can directly drive a power load from a CMOS or TTL logic. Built-in protection circuits against overvoltage (active clamp), overtemperature (thermal shutdown), and overcurrent (current limiter). * * SOP8-P-1.27A Weight: 0.08 g (typ.) * * * * Low Drain-Source ON-resistance: RDS (ON) = 0.2 (max) (@VIN = 5 V, ID = 1 A, Tch = 25C) Low Leakage Current: IDSS = 10 A (max) (@VIN = 0 V, VDS = 30 V, Tch = 25C) Low Input Current: IIN = 600 A (max) (@VIN = 5 V, Tch = -40~125C) 8-pin SOP package with embossed-tape packing. Pin Assignment (top view) SOURCE1 1 8 Marking DRAIN1 IN1 2 7 DRAIN1 TPD1046 F Part No. (or abbreviation code) Lot No. (weekly code) A line indicates Lead (Pb)-Free Finish SOURCE2 3 6 DRAIN2 IN2 4 5 DRAIN2 (TOP VIEW) Note 1: Due to its MOS structure, this product is sensitive to static electricity. 1 2007-10-02 TPD1046F Block Diagram SOURCE1 1 Overtemperature Detection /Protection IN1 2 Overcurrent Detection /Protection 8 DRAIN1 7 DRAIN1 SOURCE2 3 Overtemperature Detection /Protection IN2 4 Overcurrent Detection /Protection 6 DRAIN2 5 DRAIN2 Pin Description Pin No. 1 2 3 4 Symbol SOURCE1 IN1 SOURCE2 IN2 Source pin 1 Input pin 1 This pin is connected to a pull-down resistor internally, so that even when input wiring is open-circuited, output can never be turned on inadvertently. Source pin 2 Input pin 2 This pin is connected to a pull-down resistor internally, so that even when input wiring is open-circuited, output can never be turned on inadvertently. Drain pin 2 Drain current is limited (by current limiter) if it exceeds 3 A (min) in order to protect the IC. Drain pin 1 Drain current is limited (by current limiter) if it exceeds 3 A (min) in order to protect the IC. Pin Description 5, 6 DRAIN2 7, 8 DRAIN1 2 2007-10-02 TPD1046F Timing Chart Input signal VIN hysteresis(5 typ.) Overcurrent detection Overtemperature detection Overtemperature recovery VCL(DSS) Channel temperature VDD Drain-source Voltage VDS Inductive load Drain current ID Normal Current limiting (limiter) Overtemperature protection (Note 2) Active clamp Note 2: The overtemperature detector circuits feature hysteresis. After overtemperature is detected, normal operation is restored only when the channel temperature falls by the hysteresis amount (5C typ.) in relation to the overtemperature detection temperature. Truth Table VIN L H L H L H VDS H L H H H H Output State OFF ON OFF current limiting(limiter) OFF OFF Operating State Normal Overcurrent Overtemperature 3 2007-10-02 TPD1046F Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain current Input voltage 1device operation Power dissipation (Note 4a) per device (Note 4b) 1device operation Power dissipation (Note 4a) per device (Note 4b) Single pulse active clamp tolerance (Note 5) Active clamp current Repetitive active clamp tolerance (Note 3-a) (Note 6) Operating temperature Channel temperature Storage temperature (Ta = 25C) (Note 3-b) 2 devices operation (Ta = 25C) (Note 3-a) 2 devices operation Symbol VDS(DC) ID VIN PD(1) PD(2) PD(1) PD(2) EAS IAR EAR Topr Tch Tstg Rating 40 Internally Limited -0.3~7 0.95 0.54 0.38 0.20 97 3 54 -40~125 150 -55~150 Unit V A V W W W W mJ A J C C C Thermal Characteristics Characteristics 1device operation Thermal resistance, channel to ambient (Note 3-a) (Note 4a) 2 devices operation per device (Note 4b) 1device operation Thermal resistance, channel to ambient (Note 3-b) (Note 4a) 2 devices operation per device (Note 4b) Symbol Rth (ch-a)(1) Rth (ch-a)(2) Rth (ch-a)(1) Rth (ch-a)(2) max 132 C/W 231 330 C/W 625 Unit Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 3-b : glass epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (unit: mm) Note 3: 3-a : glass epoxy board (a) FR-4 25.4 x 25.4 x 0.8 (unit: mm) (a) (b) 4 2007-10-02 TPD1046F Note 4: a) 1 device operation : power dissipation value or thermal resistance of one side device. b) 2 devices operation per device : power dissipation value or thermal resistance per device when power is impressed evenly. Note 5: VDD = 25 V, Tch = 25C(initial), L = 10.8 mH, IAR = 3 A, RG = 25 Note 6: Repetitive rating : Pulse width limited by maximum channel temperature. 5 2007-10-02 TPD1046F Electrical Characteristics Characteristics Drain-source clamp voltage Symbol V (CL) DSS Test Circuit Tch = 25C Tch = -40~125C Tch = 25C Tch = -40~125C Tch = -40~125C Tch = 25C Tch = -40~125C Tch = 25C Tch = -40~125C Tch = -40~125C Tch = 25C Tch = -40~125C Tch = -40~125C Test Condition VIN = 0 V, ID = 1 mA VDS = 13 V, ID = 10 mA VIN = 0 V, VDS = 12 V VIN = 5 V, at normal operation VIN = 5 V, when protective circuit is actuated VIN = 5 V, ID = 1 A VIN = 46 V Min 40 40 1.0 0.9 4 Typ. 49 1.6 130 Max 60 60 2.8 3.0 7 10 30 600 600 A 2000 Unit V Input threshold voltage Protective circuit operation input voltage range Drain cut-off current Vth VIN (opr) IDSS - V V A IIH (1) High level input current IIH (2) - Drain-source on resistance Load-short tolerance Overtemperature detection temperature detection temperature recovery RDS (ON) VDS TOT(1) TOT2() IOC - 20 150 0.14 160 155 3.7 15 30 - 0.2 0.3 100 100 100 100 1.7 V C C A Tch = 25C Tch = -40~125C Tch = 25C 1 toff Tch = -40~125C Tch = 25C Tch = -40~125C Tch = 25C VIN = 5 V 125 VIN = 5 V 3.0 2.0 VDD = 13 V, VIN = 0 V/5 V, RL = 13 VIN = 0 V, IF = 1 A - Overcurrent detection ton Switching time s Drain-source diode forward voltage VDSF V Test Circuit 1 Switching time measuring circuit Test circuit Measured waveforms tr 0.1s VDD=13V RL=13 DRAIN IN VIN TPD1046F P.G. SOURCE V VDS 0V VIN 90% 10% tf 0.1s 90% 10% 90% VDS 0V 10% 13 V 5V ton toff 6 2007-10-02 TPD1046F V(CL)DSS -Tchch (CL)DSS - T 80 5 5 V th-Tch Vth - Tch VDS =13V VDS = 13V ID = 10mA ID=10mA Drain-source clamp voltage V(CL)DSS (V) V (CL)DSS (V) Input threshold voltage Vth (V) V th (V) 70 60 50 40 30 20 VIN= 0V VIN =0V 10 4 4 3 3 2 2 1 1 0 IDD=1mA I = 1mA 0 20 40 60 80 100 120 140 160 0 -80 -60 -40 -20 -80 -60 -40 -20 0 20 40 60 80 100 120 140 160 Channel temperature Tch (C) Tch ( ) Channel temperature ()ch (C) Tch T IIH(1)-Tch ch IIH(1) - T 500 450 500 IIIH(1) -V IN IH(1) -VIN T ch = 25 Tch=25C C State : Normal State: Normal High level input current IIH(1) (A) IIH(1) (A) V IN = 5V VIN=5V State : Normal State: Normal 450 400 350 300 250 200 150 100 50 0 -80 -60 -40 -20 High level input current (A) A) IIH(1) IIH (1)( 0 20 40 60 80 100 120 140 160 400 350 300 250 200 150 100 50 0 0 1 2 3 4 5 6 7 8 Channel temperature Tch ( ) Tch (C) Input voltage (V) (V) V IN VIN IIIH(2)-Tchch IH(2) - T 500 450 400 IIH(2) -V IN IH(2) -VIN 1000 V IN = 5V VIN=5V State Overcurrent State: : Overcurrent 900 T ch = 25 Tch=25C C State : Overcurrent State: Overcurent High level input current IIH(2) (A) (A) I 350 300 250 200 150 100 50 0 -80 -60 -40 -20 High level input current IIH (2)(A) IIH(2) (A) 800 700 600 500 400 300 200 100 0 IH(2) 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 6 7 8 Channel temperature) ch (C) Tch ( T V IN VIN Input voltage (V) (V) 7 2007-10-02 TPD1046F RDS(ON)-Tch R DS(ON) - Tch 0.3 0.3 RDS(ON) -VVIN RDS(ON)- IN Drain-source on resistance RDS(ON) () DS(ON) () Drain-source on resistance RDS(ON) () DS(ON) () 0 20 40 60 80 100 120 140 160 0.25 0.25 0.2 0.2 0.15 0.15 0.1 VIN = 5V VIN =5V ID=1A ID = 1A 0 -80 -60 -40 -20 0.1 D 1A ID I= =1A Tch 25 C Tch ==25C 0.05 0.05 0 0 1 2 3 4 5 6 7 8 Channel temperature Tch (C) Tch ( ) Input voltageIN VIN (V) V (V) IOC -Tch IOC - Tch 10 10 IOC -VVIN IOC - IN VIN = 5V VIN=5V (A) (A) 9 8 7 6 5 4 3 2 1 0 -80 -60 -40 -20 0 20 40 60 9 8 7 6 5 4 3 2 1 0 TTch=25C ch = 25 C Overcurrent detection I(A) IOC OC 80 100 120 140 160 Overcurrent detection I(A) IOC OC 0 1 2 3 4 5 6 7 8 Channel temperature Tch (C) Tch ( ) Input voltage VIN (V) V IN (V) 50 t ,t Tch ton,toff - Tch on off VVDD=13V DD = 13V 50 ton,toff f- VIN ton,tof -V IN VDD=13V VDD = 13V Switching time tonton,toff (s) ,toff (s) Switching time t ton,toff (s) on,toff (s) 45 40 35 30 25 20 15 10 5 0 -80 -60 -40 -20 0 20 40 60 45 40 35 30 25 20 15 10 5 0 VVIN=5V IN = 5V RR ==13 L L 13 RRL=13 L = 13 Tch 25 C Tch ==25C to to ton ton 0 1 2 3 4 5 6 7 8 80 100 120 140 160 Channel temperature ) Tch (C) Tch ( Input voltage (V) (V) V IN VIN 8 2007-10-02 TPD1046F (C ) 240 220 200 180 160 140 120 100 80 60 40 20 0 0 1 2 VDD = 13V VDD =13V TOT(1) - VIN TOT-VIN (W ) PPD- Ta D -Ta 1.6 1.4 1.2 1 (1) 0.8 0.6 0.4 0.2 0 -40 (2) (3) (4) Overtemperature detection () TOT TOT(1) Power dissipation (W) D PD P 3 4 5 6 7 8 -20 0 20 40 60 80 100 120 140 160 Input voltage VIN (V) V IN (V) Ambient Ta ( ) (C) temperature Ta (1)Mounted on glass (2)Mounted on glass (per device) (3)Mounted on glass (4)Mounted on glass (per device) epoxy board(a) 1 device operation epoxy board(a) 2 devices operation epoxy board(b) 1 device operation epoxy board(b) 2 devices operation (C/W ) rrth(ch-a)-tw th(ch-a) - tW 1000 (4) (3) (2) 100 (1) Transient thermal resistance r(/W) rth(h-a) th(ch-a) 10 1 (1)Mounted on glass epoxy board(a) 1device operation (1)Mounted on glass epoxy board(a) 1 device operation (2)Mounted on glass epoxy board(a) 2device operation (2)Mounted on glass epoxy board(a) 2 devices operation (per device) (per device) (3)Mounted on glass epoxy board(b) 1device operation (3)Mounted on glass epoxy board(b) 1 device operation (4)Mounted on glass epoxy board(b) 2device operation (4)Mounted on glass epoxy board(b) 2 devices operation (per device) (per device) Measuring single pulse,Ta=25 Measureing single pulse, Ta = 25 C 0.01 0.1 1 10 100 1000 0.1 0.001 tw tW Pulse width (s) (s) 9 2007-10-02 TPD1046F Package Dimensions Weight: 0.08 g (typ.) 10 2007-10-02 TPD1046F RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN GENERAL * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 11 2007-10-02 |
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